▎ 摘　　要

Among the familyof 2D materials, graphene is the idealcandidateas top or interlayer electrode for hybrid van der Waals heterostructuresmade of organic thin films and 2D materials due to its high conductivityand mobility and its inherent ability of forming neat interfaces withoutdiffusing in the adjacent organic layer. Understanding the chargeinjection mechanism at graphene/organic semiconductor interfaces istherefore crucial to develop organic electronic devices. In particular,Gr/C60 interfaces are promising building blocks for future n-typevertical organic transistors exploiting graphene as tunneling baseelectrode in a two back-to-back Gr/C60 Schottky diode configuration.This work delves into the charge transport mechanism across Au/C60/Grvertical heterostructures fabricated on Si/SiO2 using acombination of techniques commonly used in the semiconductor industry,where a resist-free CVD graphene layer functions as a top electrode.Temperature-dependent electrical measurements show that the transportmechanism is injection limited and occurs via Fowler-Nordheimtunneling at low temperature, while it is dominated by a nonidealthermionic emission at room and high temperatures, with energy barriersat room temperature of ca. 0.58 and 0.65 eV at the Gr/C60 and Au/C60interfaces, respectively. Impedance spectroscopy confirms that theorganic semiconductor is depleted, and the energy band diagram resultsin two electron blocking interfaces. The resulting rectifying natureof the Gr/C60 interface could be exploited in organic hot electrontransistors and vertical organic permeable-base transistors.