• 文献标题:   Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene
  • 文献类型:   Article
  • 作  者:   DIANKOV G, LIANG CT, AMET F, GALLAGHER P, LEE M, BESTWICK AJ, THARRATT K, CONIGLIO W, JAROSZYNSKI J, WATANABE K, TANIGUCHI T, GOLDHABERGORDON D
  • 作者关键词:  
  • 出版物名称:   NATURE COMMUNICATIONS
  • ISSN:   2041-1723
  • 通讯作者地址:   Stanford Univ
  • 被引频次:   11
  • DOI:   10.1038/ncomms13908
  • 出版年:   2016

▎ 摘  要

The fractional quantum Hall effect is a canonical example of electron-electron interactions producing new ground states in many-body systems. Most fractional quantum Hall studies have focussed on the lowest Landau level, whose fractional states are successfully explained by the composite fermion model. In the widely studied GaAs-based system, the composite fermion picture is thought to become unstable for the N >= 2 Landau level, where competing many-body phases have been observed. Here we report magneto-resistance measurements of fractional quantum Hall states in the N = 2 Landau level (filling factors 4 < vertical bar n vertical bar < 8) in bilayer graphene. In contrast with recent observations of particle-hole asymmetry in the N = 0/N = 1 Landau levels of bilayer graphene, the fractional quantum Hall states we observe in the N = 2 Landau level obey particle-hole symmetry within the fully symmetry-broken Landau level. Possible alternative ground states other than the composite fermions are discussed.