• 文献标题:   Bias-Voltage Dependence of Tunneling Decay Coefficient and Barrier Height in Arylalkane Molecular Junctions with Graphene Contacts as a Protecting Interlayer
  • 文献类型:   Article
  • 作  者:   IM K, SEO DH, SONG H
  • 作者关键词:   molecular tunnel junction, simmons model, barrier lowering, graphene
  • 出版物名称:   CRYSTALS
  • ISSN:  
  • 通讯作者地址:  
  • 被引频次:   1
  • DOI:   10.3390/cryst12060767
  • 出版年:   2022

▎ 摘  要

We studied a molecular junction with arylalkane self-assembled monolayers sandwiched between two graphene contacts. The arrangement of graphene-based molecular junctions provides a stable device structure with a high yield and allows for extensive transport measurements at 78 K. We observed a temperature-independent current density-voltage (J-V) characteristic and the exponential dependency of the current density on the molecular length, proving that the charge transport occurs by non-resonant tunneling through the molecular barrier. Based on the Simmons model, the bias-voltage dependence of the decay coefficient and barrier height was extracted from variable-length transport characterizations. The J-V data measured were simulated by the Simmons model, which was modified with the barrier lowering induced by the bias voltage. Indeed, there isno need for adjustable fitting parameters. The resulting simulation was in remarkable consistency with experimental measurements over a full bias range up to |V|