▎ 摘　　要

Effects of disorder on the electronic transport properties of graphene are strongly affected by the Dirac nature of the charge carriers in graphene. This is particularly pronounced near the Dirac point, where relativistic charge carriers cannot efficiently screen the impurity potential. We have studied time-dependent quantum conductance fluctuations in graphene in the close vicinity of the Dirac point at low temperatures. We show that the low-frequency noise arises from the quantum interference effects due to scattering on slowly fluctuating impurities. An unusually large reduction of the noise power in magnetic field suggests that an additional symmetry plays an important role in this regime.