• 文献标题:   Electronic Coupling between Graphene and Topological Insulator Induced Anomalous Magnetotransport Properties
  • 文献类型:   Article
  • 作  者:   ZHANG L, LIN BC, WU YF, WU HC, HUANG TW, CHANG CR, KE X, KURTTEPELI M, VAN TENDELOO G, XU J, YU D, LIAO ZM
  • 作者关键词:   topological insulator, electronic coupling, proximity effect, negative magnetoresistance, asymmetric magnetoresistance
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Peking Univ
  • 被引频次:   11
  • DOI:   10.1021/acsnano.7b02494
  • 出版年:   2017

▎ 摘  要

It has been theoretically proposed that the spin textures of surface states in a topological insulator can be directly transferred to graphene by means of the proximity effect, which is very important for realizing a two-dimensional topological insulator based on graphene. Here we report the anomalous magnetotransport properties of graphene topological insulator Bi2Se3 heterojunctions, which are sensitive to the electronic. coupling between graphene and the topological surface state. The coupling between the p(z) orbitals of graphene and the p orbitals of the surface states on the Bi2Se3 bottom surface can be enhanced by applying a perpendicular negative magnetic field, resulting in a giant negative magnetoresistance at the Dirac point up to about -91%. An obvious resistance dip in the transfer curve at the Dirac point is also observed in the hybrid devices, which is consistent with theoretical predictions of the distorted Dirac bands with nontrivial spin textures inherited from the Bi2Se3 surface states.