▎ 摘　　要

Graphene and other two-dimensional (2D) materials are promising materials for photonics and optoelectronics applications. A significant requirement for these applications is to develop cost effective and industrial scale production processes, while providing a balance between fabrication and final material quality. In this paper, we are reporting the replacement of indium tin oxide (ITO) with reduced graphene oxide (r-GO) for transparent conducting electrodes for optoelectronic devices. We have synthesized graphene oxide (GO) by modified Hummers method and deposited on quartz substrate by spry-pyrolysis to fabricate thin film of GO. These thin films were reduced by aluminum and sodium borohydrate. For characterization of fabricated thin films UV-VIS spectrophotometer, Atomic force microscopy (AFM) and Four-point probe were used.