▎ 摘　　要

In this paper, we describe the design, fabrication and optical characterization of III-V based photonic crystal microcavities. Room-temperature continuous-wave laser emission was measured in these structures including InAsP/InP quantum wells as the active medium. The photonic crystal microcavities were fabricated using electron beam lithography and reactive ion etching techniques. Laser operation was observed in the 1500-1560 nm wavelength range with a lasing threshold pump power of nearly 135 mu W for microcavities of 2.5 mu m in length. When combined with a graphene saturable absorber, these photonic crystal microlasers could form the basis of a new class of integrated mode-locked microlasers capable of delivering a train of short optical pulses on-chip.