▎ 摘　　要

A type of broadband (325-980 nm) self-powered photodetector based on graphene/GaAs van der Waals heterojunction is reported. By simply spinning a layer of Ag nano-particles (Ag NPs) onto graphene/GaAs heterostructure, the responsivity and detectivity of our devices for the whole spectrum range are enhanced significantly. The maximum photocurrent responsivity of 210 mA W-1 (increased by 38%) and detectivity of 2.98 x 10(13) Jones (increased by 202%) are achieved at 405 nm, which is about two or three orders of magnitude larger than other graphene based self-powered photodetectors. The mechanism of the improvement originates from the overlap the depletion region of graphene/GaAs heterostructure, the surface plasmon enhanced light field region below the surface and the light absorption region of the GaAs layer. The external quantum efficiency (EQE) measurement, transient photoluminescence (PL) test and the comparative theoretical simulation show that the surface plasmon enhancement should only be applicable for graphene/direct band gap semiconductor heterostructure, where the semiconductor should have a high optical absorption coefficient. The obtained high performance broadband photodetector with excellent detectivity is a promising candidate for many important optoelectronic applications, such as ultrasensitive image sensor in charge coupled displayer field, which requires colour sensors not only with high photo responsivity but also in a wide spectral range.