▎ 摘　　要

As a new type of photonic-chip light source, quantum dot (QD) lasers have recently received remarkable attention. However, two significant problems remain to be solved: the high lasing threshold characteristics and the single wavelength application in a photonic chip. To achieve this, a multi-wavelength quantum dot laser is proposed. An ultrathin QDs-film laser with a thickness of 78 nm is developed. The microstructure of MAPbBr(3) + graphene + CoGaZnS is studied using Raman spectroscopy and simulation, illustrating the different optical bandgap structures in different combinations. Four-wavelength lasing at 540, 628, 769, and 824 nm with thresholds of 25 kW cm(-2) and 50 kW cm(-2) are achieved at room temperature. The finite-difference time-domain (FDTD) simulation results suggest a photon-jumping phenomenon in a fixed period. Subsequently, the transient absorption (TA) spectrum of the QDs-film is measured to reveal the ultrafast photonics process, which proves the two hot-carrier transfer processes and the zitterbewegung (ZB) phenomenon in graphene at 416 nm. The ZB-dominated hot-carrier transfer from perovskite MAPbBr(3) to CoGaZnS is confirmed. This study can contribute to hot-carrier lasing and light-source research in photonic chips.