• 文献标题:   Temperature-Controlled Rotational Epitaxy of Graphene
  • 文献类型:   Article
  • 作  者:   OMAMBAC KM, HATTAB H, BRAND C, JNAWALI G, N DIAYE AT, CORAUX J, VAN GASTEL R, POELSEMA B, MICHELY T, ZU HERINGDORF FJM, HORNVON HOEGEN M
  • 作者关键词:   graphene, strainrelief, moire, iridium, thermal expansion
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Univ Duisburg Essen
  • 被引频次:   4
  • DOI:   10.1021/acs.nanolett.9b01565
  • 出版年:   2019

▎ 摘  要

When graphene is placed on a crystalline surface, the periodic structures within the layers superimpose and moire superlattices form. Small lattice rotations between the two materials in contact strongly modify the moire lattice parameter, upon which many electronic, vibrational, and chemical properties depend. While precise adjustment of the relative orientation in the degree-and sub-degree-range can be achieved via careful deterministic transfer of graphene, we report on the spontaneous reorientation of graphene on a metallic substrate, Ir(111). We find that selecting a substrate temperature between 1530 and 1000 K during the growth of graphene leads to distinct relative rotational angles of 0 degrees, +/- 0.6 degrees, +/- 1.1 degrees, and +/- 1.7 degrees. When modeling the moire superlattices as two-dimensional coincidence networks, we can ascribe the observed rotations to favorable low -strain graphene structures. The dissimilar thermal expansion of the substrate and graphene is regarded as an effective compressive biaxial pressure that is more easily accommodated in graphene by small rotations rather than by compression.