• 文献标题:   Magnetotransport in Graphene/Pb0.24Sn0.76Te Heterostructures: Finding a Way to Avoid Catastrophe
  • 文献类型:   Article
  • 作  者:   STEPHEN GM, NAUMOV I, BLUMENSCHEIN NA, SUN YJL, DEMELL JE, SHIRODKAR SN, DEV P, TAYLOR PJ, ROBINSON JT, CAMPBELL PM, HANBICKI AT, FRIEDMAN AL
  • 作者关键词:   topological insulator, magnetoresistance, graphene, polar catastrophe, heterostructure, twodimensional electron ga
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1021/acsnano.2c08911 EA OCT 2022
  • 出版年:   2022

▎ 摘  要

While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, twodimensional materials and topological materials, are particularly promising because of the wide range of possible permutations that are easily accessible. Individually, both graphene and Pb1-xSnxTe (PST) are widely investigated for spintronic applications because graphene's high carrier mobility and PST's topologically protected surface states are attractive platforms for spin transport. Here, we combine monolayer graphene with PST and demonstrate a hybrid system with properties enhanced relative to the constituent parts. Using magnetotransport measurements, we find carrier mobilities up to 20 000 cm2/(V s) and a magnetoresistance approaching 100%, greater than either material prior to stacking. We also establish that there are two distinct transport channels and determine a lower bound on the spin relaxation time of 4.5 ps. The results can be explained using the polar catastrophe model, whereby a high mobility interface state results from a reconfiguration of charge due to a polar/nonpolar interface interaction. Our results suggest that proximity induced interface states with hybrid properties can be added to the still growing list of behaviors in these materials.