• 文献标题:   Defects and doping and their role in functionalizing graphene
  • 文献类型:   Article
  • 作  者:   PANTELIDES ST, PUZYREV Y, TSETSERIS L, WANG B
  • 作者关键词:  
  • 出版物名称:   MRS BULLETIN
  • ISSN:   0883-7694 EI 1938-1425
  • 通讯作者地址:   Vanderbilt Univ
  • 被引频次:   52
  • DOI:   10.1557/mrs.2012.187
  • 出版年:   2012

▎ 摘  要

Graphene is a two-dimensional material with unique properties, such as superb mechanical strength and carrier mobility. Similarly to semiconductors, however, graphene is not very useful for applications in its pristine form; rather, it must be "functionalized" through judicious manipulation of defects, impurities, and adsorbates. In this article, we provide an overview of the intrinsic defects in graphene, such as vacancies, interstitials, and line defects, and their potential role in transport and other properties. We also discuss impurities and adsorbates that can act as dopants to enhance carrier densities, controlling n- and p-type conduction for transistor applications, and can serve as reactive sites for catalytic and sensor applications. Although functionalization holds significant promise, realization of that potential remains an open pursuit.