▎ 摘　　要

We report the optoelectronic behavior of a novel reduced graphene oxide (rGO)/ZnO structure which has been realized by photocatalytic reduction of chemically exfoliated GO sheets. Lateral ZnO nanowires, which are grown between interdigital electrodes by a novel plasma-assisted procedure, are utilized as the photocatalyst metal oxide in the presented hetero-structure. Raman spectroscopy and FTIR analyses are utilized to show that photocatalytic reduction of GO sheets, with few (less than 5) layers, occurs after about 30 min of UV-illumination. Low-temperature electrical characterizations are applied to demonstrate one-dimensional behavior of the realized rGO ribbons, with an estimated width of around 30 nm. The optoelectronic characteristics of the fabricated rGO/ZnO hybrid structure also lead to high responsivity of about 12 A/W and a sensitivity of about 5 x 10(4-) % (at the bias voltage of -5 V), which entitles the fabricated structure as an efficient photodetector. All in all, our experimental results open up a promising simple approach to fabricate GNR-based devices by assisting lateral ZnO nanowire, without involving nanolithography issues.