▎ 摘　　要

The introduction of graphene (Gr) with high thermal conductivity between GaAs and metal electrode can reduce the internal temperature rise and thermal stress accumulation of high-power chips, such as photoconductive switches, protect the contact electrode, and improve the device stability. Meanwhile, the introduction of graphene has the potential to decrease the interface contact resistance. It is valuable to study the effect of graphene on the contact characteristics of the metal-semiconductor interface. The metallic composite Ni/Ge/Au/Ni/Au was obtained by electron beam evaporation, and the graphene was grown by CVD. The current-voltage (I-V) characteristics of the devices over a high-temperature range 300 K-420 K were measured by a semiconductor parameter analyzer. The Schottky barrier properties of metal/semi-insulating GaAs (M/SI-GaAs) with and without graphene interlayer were analyzed by some analysis techniques, such as forward I-V and Norde's methods. It was observed that the barrier heights (BHs) were inhomogeneousin the high-temperature range. The mean BHs were extracted by the experimental BH versus 1/T. We found that the homogeneous BH of M/Gr/SI-GaAs was lower that of M/SI-GaAs. It is helpful to improve the performance of semiconductor devices, as we realized the specific contact resistivity lower by two orders of magnitudes via graphene insertion.