▎ 摘　　要

Graphene films were grown on Si(1 1 1) substrates at different temperatures (600, 700 and 800 degrees C) by directly depositing solid-state carbon atoms through solid-state molecular beam epitaxy (SSMBE). The structural properties were characterized by reflection high energy electron diffraction (RHEED), Raman spectroscopy and near-edge X-ray absorption fine-structure (NEXAFS). The results showed that SiC precipitates primarily formed at 700 and 800 degrees C. as a small quantity of carbon atoms were deposited. When carbon atoms continued depositing, graphene films formed at 800 degrees C and amorphous or polycrystalline carbon thin films formed at 700 and 600 degrees C. We think that graphene films could be grown on Si(1 1 1) substrates because of the high activity of carbon atoms at 800 degrees C and weak interaction between carbon atoms and silicon atoms of substrate due to a SiC buffer layer stabilizing the surface of Si substrate. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.