▎ 摘　　要

We fabricate free-standing graphene structures from epitaxial graphene on silicon carbide using a photoelectrochemical (PEC) etching process. A combination of Raman spectroscopy and magnetotransport measurements was used to investigate multiterminal devices in various geometries. From the analysis of Raman data and Shubnikov-de Haas oscillations, we conclude that the buffer layer is converted into a graphene layer and, thus, monolayer graphene on SiC gets converted to a free-standing AB-stacked bilayer. The bilayer exhibits inversion-symmetry breaking because of differential doping between the layers. Additionally, lateral inhomogeneities exist in the form of domains with nonuniform mobility. The same PEC process on a pure buffer layer, however, does not yield monolayer graphene.