▎ 摘　　要

We synthesized a combinatorial library of CuxN1-x alloy thin films via co-sputtering from Cu and Ni targets to catalyze graphene chemical vapor deposition. The alloy morphology, composition, and microstructure were characterized via scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), and X-ray diffraction (XRD), respectively. Subsequently, the CuxN1-x alloy thin films were used to grow graphene in a CH4-Ar-H-2 ambient at atmospheric pressure. The underlying rationale is to adjust the CuxN1-x composition to control the graphene. Energy dispersive x-ray spectroscopy (EDS) analysis revealed that a continuous gradient of Cu-x N1-x (25 at. % < x < 83 at.%) was initially achieved across the 100 mm diameter substrate (similar to 0.9%/mm composition gradient). The XRD spectra confirmed a solid solution was realized and the face-centered cubic lattice parameter varied from similar to 3.52 to 3.58 angstrom, consistent with the measured composition gradient, assuming Vegard's law. Optical microscopy and Raman analysis of the graphene layers suggest single layer growth occurs with x > 69 at.%, bilayer growth dominates from 48 at.% < x < 69 at.%, and multilayer (>= 3) growth occurs for x < 48 at.%, where x is the Cu concentration. Finally, a large area of bi-layer graphene was grown via a CuxNi1-x catalyst with optimized catalyst composition and growth temperature.