▎ 摘　　要

We study the effect of resonant scatterers on the local density of states in a rectangular graphene setup with metallic leads. We find that the density of states in the vicinity of the Dirac point acquires a strong position dependence due to both metallic proximity effect and impurity scattering. This effect may prevent uniform gating of weakly-doped samples. We also demonstrate that even a single-atom impurity may essentially alter electronic states at low-doping on distances of the order of the sample size from the impurity.