▎ 摘　　要

In this paper,. an accurate analytical model has been developed to optimize the performance of an Interdigitated Graphene Electrode/p-silicon carbide (IGE/p-4H-SiC) Metal semiconductor Metal (MSM) photodetector operating in a wide range of temperatures. The proposed model considers different carrier loss mechanisms and can reproduce the experimental results well. An overall assessment of the electrodes geometrical parameters' influence on the device sensitivity and speed performances was executed. Our results confirm the excellent ability of the suggested Graphene electrode system to decrease the unwanted shadowing effect. A responsivity of 238 mu A/W was obtained under 325-nm illumination compared to the 16.7 mu A/W for the conventional Cr-Pd/p-SiC PD. A photocurrent to- dark-current ratio (PDCR) of 5.75 x 10(5) at 300K and 270 at 500K was distinguished. The response time was found to be around 14 mu s at 300K and 54.5 mu s at 500K. Furthermore, the developed model serves as a fitness function for the multi objective optimization (MOGA) approach. The optimized IGE/p-4H-SiC MSM-PD design not only exhibits higher performance in terms of PDCR (7.2 x 10(5)), responsivity (430A/cm(2)) and detectivity (1.3 x 10(14) Jones) but also balances the compromise between ultrasensitive and high-speed figures of merit with a response time of 4.7 mu s. Therefore, the proposed methodology permits to realize ultra-sensitive, high-speed SiC optoelectronic devices for extremely high temperature applications. (C) 2020 Elsevier B.V. All rights reserved.