▎ 摘　　要

Wrinkle free few layer graphene was demonstrated by a graphitization of 4H-SiC substrates using a high power pulsed KrF laser. Wrinkles often observed after thermal graphitization were eliminated with a short heat cycle using a pulse laser anneal. Few layer graphene formed by the laser graphitization appears to have a non-Bernal stack, which leads to on-off ratio of similar to 2 even at a few layer graphene. Drive current of 143 mu A/mu m was obtained at V(d) = 100 mV and field effect mobility was 374 cm(2)/Vs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3629785]