▎ 摘　　要

Using the energy spectrum of graphene with spatially modulated potential, we study the Goos-Hanshen shifts near extra Dirac points located at finite energy epsilon = m pi, with m integer. On both sides of such points, we show that the Goos-Hanshen shifts can be negative as well as positive under various conditions. It is found that the shifts are strongly depending on the effects of the incident energy, potential height, incident angle and width of central region of unit cell. Such effects tell us that the width can be used to tune the shifts at the extra Dirac points. Furthermore, we study the influence of the defect caused by the applied potential on the obtained results.