▎ 摘　　要

We report the fabrication of gallium nitride (GaN)-based light-emitting diode (LED) with uniform and monolayer graphene as transparent current spreading layer. Two-dimensional graphene successfully provides efficient current spreading and hole injection into the active layers of the LEDs for light emission. To further reduce the ohmic contact resistance between p-GaN and graphene film, ultrathin NiOx inter-layer is introduced in the device, improving its electrical and optical performance. (C) 2015 Elsevier Ltd. All rights reserved.