• 文献标题:   Electron interaction, charging, and screening at grain boundaries in graphene
  • 文献类型:   Article
  • 作  者:   IHNATSENKA S, ZOZOULENKO IV
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Simon Fraser Univ
  • 被引频次:   12
  • DOI:   10.1103/PhysRevB.88.085436
  • 出版年:   2013

▎ 摘  要

Electronic, transport, and spin properties of grain boundaries (GBs) are investigated in electrostatically doped graphene at finite electron densities within the Hartree and Hubbard approximations. We demonstrate that depending on the character of the GBs, the states residing on them can have a metallic character with a zero group velocity or can be fully populated losing the ability to carry a current. These states show qualitatively different features in charge accumulation and spin polarization. We also demonstrate that the semiclassical Thomas-Fermi approach provides a satisfactory approximation to the calculated self-consistent potential. The conductance of GBs is reduced due to enhanced backscattering from this potential.