▎ 摘　　要

We reported on enhanced device performance of ambipolar thin-film transistors (TFTs) with hybrid channel of Zinc oxide (ZnO) and multi-layer graphene (MLG), especially in reduced sub-threshold swing characteristics and increased carrier mobilities for the ambipolar conduction. The Raman spectroscopy and x-ray photoelectron spectroscopy (XPS) showed that the single-layer graphene could be damaged by oxidation during the ZnO growth process. In MLG, we observed that the graphene layers distant from the interface of ZnO/graphene could be protected, leading to enhanced electrical properties in ZnO/graphene hybrid TFTs. These results showed that the ZnO/MLG hybrid structure is a suitable building block to realize advanced TFTs with low power consumption and high switching speed.