▎ 摘　　要

Combining 2D graphene, which has zero bandgap yet high carrier mobility, with a permanent bandgap of 2D MoS2 opens up numerous possibilities for development of future electronic devices and sensors. This study reports for the first time the fabrication of flexible all paper based few layer graphene (Gr)-MoS2 field effect transistor (FET) using biodegradable cellulose paper as a substrate for growing Gr/MoS2 as well as dielectric and pencil graphite as gate. The as fabricated Gr/MoS2 transistor exhibits on/off ratio of approximate to 99 with carrier mobility of 18.7 cm(2) V-1 s(-1), which is remarkable considering the simplicity and low cost of the device fabrication. The Gr/MoS2 transistor is utilized as strain sensor, which could detect negligible strains as low as 0.5%. Detailed mechanism studies in both resistor and FET configurations with Gr/MoS2 as a channel are presented to better understand the sensing behavior under both tensile and compressive strain conditions. Further, by interfacing the sensor with the microcontroller, the data are acquired and transferred to the smartphone through bluetooth communication thus enabling human motion monitoring. This low cost, large area Gr/MoS2 FET based strain sensor has huge potential in wireless wearable electronics, such as artificial electronic skin, medical diagnostics, human machine interface, etc.