• 文献标题:   Local spectroscopy of moire-induced electronic structure in gate-tunable twisted bilayer graphene
  • 文献类型:   Article
  • 作  者:   WONG D, WANG Y, JUNG J, PEZZINI S, DASILVA AM, TSAI HZ, JUNG HS, KHAJEH R, KIM Y, LEE J, KAHN S, TOLLABIMAZRAEHNO S, RASOOL H, WATANABE K, TANIGUCHI T, ZETTL A, ADAM S, MACDONALD AH, CROMMIE MF
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Univ Calif Berkeley
  • 被引频次:   42
  • DOI:   10.1103/PhysRevB.92.155409
  • 出版年:   2015

▎ 摘  要

Twisted bilayer graphene (tBLG) forms a quasicrystal whose structural and electronic properties depend on the angle of rotation between its layers. Here, we present a scanning tunneling microscopy study of gate-tunable tBLG devices supported by atomically smooth and chemically inert hexagonal boron nitride (BN). The high quality of these tBLG devices allows identification of coexisting moire patterns and moire super-superlattices produced by graphene-graphene and graphene-BN interlayer interactions. Furthermore, we examine additional tBLG spectroscopic features in the local density of states beyond the first van Hove singularity. Our experimental data are explained by a theory of moire bands that incorporates ab initio calculations and confirms the strongly nonperturbative character of tBLG interlayer coupling in the small twist-angle regime.