▎ 摘　　要

In this paper, we investigated the effects of graphene n-doping on the metal-graphene (M-G) contact through n-type doping on phosphosilicate glass (PSG), which is commonly used in CMOS fabrication technology for insulating layers. Here, the n-doping was achieved by out-diffused P2O5 molecules, which have negatively charges and are expected to attract and hold hole carriers at the graphene-PSG layer, consequently inducing n-doping of graphene. In order to confirm the n-doping phenomenon, we conducted Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS) analyses. Then, we analyzed the effect of n-doping on the contact resistance to extract the contact resistance using a transfer length method (TLM) structure. Additionally, we extracted the field-effect mobility by reducing the contact resistance and analyzed the air stability of the n-doping by monitoring the contact resistance as a function of the exposure time up to 120 hours. Finally, we observed that the contact resistance decreased from 7.9 k Omega-mu m to 2.1 k Omega-/mu m and a five times higher field-effect mobility was obtained as the contact resistance decreased.