▎ 摘　　要

A method for the direct synthesis of wafer-scale graphene on dielectric substrates using trace amounts of carbon found in metals is reported. Graphene films were synthesized through a single-step thermal annealing process of a Cu/Ni bilayer deposited on a SiO2/Si and a quartz substrate in a low pressure H-2/Ar environment. No additional carbon source was provided. The Cu film partially evaporated during growth, leaving a graphene layer above and beneath the Ni film. A wet etch step allowed complete removal of the metals, resulting in continuous graphene coverage of the surface. A simple pattered synthesis of graphene was performed using this technique demonstrating the ability to control the growth of graphene to specific regions over large areas of the wafer. (C) 2013 The Electrochemical Society. All rights reserved.