▎ 摘　　要

Chemical doping is one of the most effective methods to tune the electrochemical properties of graphene. We report a simple and relatively low-temperature process for the fabrication of boron doped graphene by using a spin-on dopant (SOD) method. SOD-treated graphene was successfully doped with boron atoms at a temperature lower than 600 degrees C. The fabricated boron doped graphene exhibits a specific capacitance of 4 mF cm(-2), as well as a high-rate performance of 91.9% at 200 mV s(-1) as an electrode material for pseudo-capacitors. It also shows excellent oxygen reduction activity and durability with a current retention of 91.4% and methanol-tolerance properties. These features are beneficial for catalyst applications in the oxygen reduction reaction due to well-engineered boron sites with high electrical conductivity and many active sites for electrochemical reactions.