▎ 摘　　要

A nonvolatile magnetic switch is proposed by utilizing the unique properties of graphene-ferromagnet composite structures. The basic mechanism relies on the role of graphene in mediating and modulating the effective exchange bias between adjacent magnetic layers, which can lead to electrically controlled rotation of magnetic bits. Readout of magnetization states is also achieved electrically through the magnetoresistance effect in the graphene channel. The proposed switch can be used to realize both the memory and programmable logic elements. Theoretical estimates illustrate the feasibility of the concept as well as its potential advantage of low power consumption (similar to 10(-19) J) for the intrinsic switching operation.