▎ 摘　　要

Atomistic quantum transport simulations of a large ensemble of devices are employed to investigate the impact of different sources of disorder on the transport properties of extremely scaled (length of 10 nm and width of 1-4 nm) graphene nanoribbons. We report the dependence of the transport gap, ON- and OFF-state conductances, and ON-OFF ratio on edge-defect density, vacancy density, and potential fluctuation amplitude. For the smallest devices and realistic lattice defect densities, the transport gap increases by up to similar to 300%, and the ON-OFF ratio reaches almost similar to 10(6). We also report a rather high variation of the transport gap and ON-OFF ratio. In contrast, we find that the potential fluctuations have a negligible impact on the transport gap and cause a relatively modest increase of the ON-OFF ratio.