▎ 摘　　要

Schottky junction ultraviolet (UV) photodetector was fabricated by spin coating a hole conducting polymer, poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT: PSS) on hydrothermally grown zinc oxide (ZnO) nanorod array. The photodetector performance was improved by increasing the conductivity of PEDOT: PSS polymer using dimethyl sulfoxide (DMSO) additive. The UV detector performance was further enhanced significantly by sensitizing ZnO nanorods with N doped graphene quantum dots (NGQDs). NGQD decorated ZnO NRs/DMSO-PEDOT: PSS Schottky junction device demonstrated superior external quantum efficiency (EQE similar to 90063%), responsivity (R-lambda similar to 247 A/W) and detectivity (D-lambda similar to 2.42 x 10(11) Hz(1/2)/W) at 340 nm wavelength and -1V external bias. The EQE of NGQD modified sample was 56 times higher than pristine PEDOT: PSS/ ZnO NR and 4.3 times higher than DMSO modified PEDOT: PSS/ZnO NRs device. NGQD sensitized detector showed superior photocurrent of 80.77 mA/cm(2) at 340 nm wavelength, -1V external bias, which was 2 times higher than DMSO modified and 32 times higher than pristine PEDOT: PSS based device. The photocurrent rise and decay time of NGQD sensitized NRs are very fast compared to other photodetectors.