• 文献标题:   Delay Analysis of Graphene Field-Effect Transistors
  • 文献类型:   Article
  • 作  者:   WANG H, HSU A, LEE DS, KIM KK, KONG J, PALACIOS T
  • 作者关键词:   carrier velocity, chemical vapor deposition graphene, delay analysi, graphene fet gfet, sapphire
  • 出版物名称:   IEEE ELECTRON DEVICE LETTERS
  • ISSN:   0741-3106
  • 通讯作者地址:   MIT
  • 被引频次:   23
  • DOI:   10.1109/LED.2011.2180886
  • 出版年:   2012

▎ 摘  要

In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs). The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFET structures.