▎ 摘　　要

The authors demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to few-layers at the source and drain contacts. It was found that such devices have electron mobility comparable to the reference single-layer graphene devices while producing lower noise levels. The metal doping of graphene and difference in the electron density of states between the single-layer and few-layer graphene cause the observed noise reduction. The results shed light on the noise origin in graphene. (C) 2012 American Institute of Physics. [doi:10.1063/1.3676277]