• 文献标题:   Graphene antidot lattices: Designed defects and spin qubits
  • 文献类型:   Article
  • 作  者:   PEDERSEN TG, FLINDT C, PEDERSEN J, MORTENSEN NA, JAUHO AP, PEDERSEN K
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Aalborg Univ
  • 被引频次:   374
  • DOI:   10.1103/PhysRevLett.100.136804
  • 出版年:   2008

▎ 摘  要

Antidot lattices, defined on a two-dimensional electron gas at a semiconductor heterostructure, are a well-studied class of man-made structures with intriguing physical properties. We point out that a closely related system, graphene sheets with regularly spaced holes ("antidots"), should display similar phenomenology, but within a much more favorable energy scale, a consequence of the Dirac fermion nature of the states around the Fermi level. Further, by leaving out some of the holes one can create defect states, or pairs of coupled defect states, which can function as hosts for electron spin qubits. We present a detailed study of the energetics of periodic graphene antidot lattices, analyze the level structure of a single defect, calculate the exchange coupling between a pair of spin qubits, and identify possible avenues for further developments.