• 文献标题:   Effect of minor graphene doping on the microstructure and superconductivity of FeSe
  • 文献类型:   Article
  • 作  者:   GONG CC, ZHAO Q, PING XC, ZHANG P, LIU YS, HAO L
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS
  • ISSN:   0957-4522 EI 1573-482X
  • 通讯作者地址:   Tianjin Univ Sci Technol
  • 被引频次:   0
  • DOI:   10.1007/s10854-020-04097-w EA AUG 2020
  • 出版年:   2020

▎ 摘  要

The polycrystalline FeSe bulks were sintered by solid-state reaction using a two-step sintering process to investigate the effect of graphene addition on the superconductivity and microstructure of the FeSe bulks. With the increase of graphene doping, the thickness of tetragonal beta-FeSe sheet decreased obviously due to the existence of graphene between the layers. The grain connectivity of FeSe superconductor is significantly improved, and the critical transition temperature (T-c) is apparently enhanced up to 10.57 K in Fe(1.01)SeG(0.05), which increased by 15.3% compared to the Fe1.01Se bulk without doping graphene. The critical current density (J(c)) of Fe(1.01)SeG(0.05)reaches 5 x 10(3)A/cm(2)under zero magnetic field. Moreover, the critical current density (J(c)) of Fe(1.01)SeG(0.05)is simultaneously increased under high magnetic field due to the refined grains by graphene doping.