• 文献标题:   Tunneling recombination in optically pumped graphene with electron-hole puddles
  • 文献类型:   Article
  • 作  者:   RYZHII V, RYZHII M, OTSUJI T
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Aizu
  • 被引频次:   6
  • DOI:   10.1063/1.3656712
  • 出版年:   2011

▎ 摘  要

We evaluate recombination of electrons and holes in optically pumped graphene associated with the interband tunneling between electron-hole puddles and calculate the recombination rate and time. It is demonstrated that this mechanism can be dominant in a wide range of pumping intensities. We show that the tunneling recombination rate and time are nonmonotonic functions of the quasi-Fermi energies of electrons and holes and optical pumping intensity. This can result in hysteresis phenomena. (C) 2011 American Institute of Physics. [doi:10.1063/1.3656712]