• 文献标题:   Dip-Pen Nanolithography of Electrical Contacts to Single Graphene Flakes
  • 文献类型:   Article
  • 作  者:   WANG WM, STANDER N, STOLTENBERG RM, GOLDHABERGORDON D, BAO ZA
  • 作者关键词:   gold electrode, patterning, graphene, scanning probe lithography, dip pen nanolithography, nanofabrication
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Stanford Univ
  • 被引频次:   18
  • DOI:   10.1021/nn101324x
  • 出版年:   2010

▎ 摘  要

This study evaluates an alternative to electron beam lithography for fabricating nanoscale graphene devices Dip pen nanolithography is used for defining monolayer graphene flakes and for patterning of gold electrodes through writing of an alkylthiol Within films of gold evaporated onto graphene flakes A wet gold etching step was used to form the individual devices The sheet resistances of these monolayer graphene devices are comparable to reported literature values This alternative technique for making electrical contact to 2D nanostructures provides a platform for fundamental studies of nanomaterial properties The ments of using dip-pen nanolithography include lack of electron beam irradiation damage and targeted patterning of individual devices with imaging and writing conducted in the same instrument under ambient conditions