• 文献标题:   High-Performance Memory Device Using Graphene Oxide Flakes Sandwiched Polymethylmethacrylate Layers
  • 文献类型:   Article
  • 作  者:   VALANARASU S, KULANDAISAMY I, KATHALINGAM A, RHEE JK, VIJAYAN TA, CHANDRAMOHAN R
  • 作者关键词:   organic bistable memory device, solution processing, polymethyl methacrylate, graphene oxide
  • 出版物名称:   JOURNAL OF NANOSCIENCE NANOTECHNOLOGY
  • ISSN:   1533-4880 EI 1533-4899
  • 通讯作者地址:   Arul Anandar Coll
  • 被引频次:   5
  • DOI:   10.1166/jnn.2013.7740
  • 出版年:   2013

▎ 摘  要

Organic bistable devices (OBDs) using graphene oxide (GO) flakes sandwiched polymethylmethacrylate (PMMA) films were fabricated. These devices exhibited two accessible conducting states, that is, a low-conductivity (OFF) state and a high-conductivity (ON) state. The devices can be switched to ON state under a negative electrical sweep; it can also be reset to the initial OFF state by a reverse (positive) electrical sweep. Detailed I-V measurements have shown that in ITO/PMMA/GO/PMMA/Al sandwiches the resistive switching originates from the formation and rupture of conducting filaments. The ON/OFF ratio of the OBDs was approximately 5 x 10(3), reproducibility of more than 10(5) cycles, and retention time of 10(4) s. These properties show that the device is promising for high-density, low-cost memory application.