▎ 摘　　要

Graphene is a promising candidate material for high-speed and ultra-broadband photodetectors. However, graphene-based photodetectors suffer from low photoreponsivity and I-light/I-dark ratios due to their negligible-gap nature and small optical absorption. Here, a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector is reported, with a large photoresponsivity of 0.5 AW(-1) and I-light/I-dark ratio of 5 x 10(2), while the photoresponsivity and I-light/I-dark ratio of graphene infrared photodetectors are 0.1 mAW(-1) and 1, respectively. The Fermi level (E-F) of graphene can be widely tuned by the gate voltage owing to its 2D nature. As a result, the back-gated bias can modulate the Schottky barrier (SB) height at the interface between graphene and InAs NWs. Simulations further demonstrate the rectification behavior of graphene/InAs NW heterojunctions and the tunable SB controls charge transport across the vertically stacked heterostructure. The results address key challenges for graphene-based infrared detectors, and are promising for the development of graphene electronic and optoelectronic applications.