• 文献标题:   Theory of the quantum Hall effect in finite graphene devices
  • 文献类型:   Article
  • 作  者:   KRAMER T, KREISBECK C, KRUECKL V, HELLER EJ, PARROTT RE, LIANG CT
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Univ Regensburg
  • 被引频次:   18
  • DOI:   10.1103/PhysRevB.81.081410
  • 出版年:   2010

▎ 摘  要

We study the quantum Hall effect (QHE) in graphene based on the current injection model, which takes into account the finite rectangular geometry with source and drain electrodes. In our model, the presence of disorder, the edge-state picture, extended states, and localized states, which are believed to be indispensable ingredients in describing the QHE, do not play an important role. Instead the boundary conditions during the injection into the graphene sheet, which are enforced by the presence of the Ohmic contacts, determine the current-voltage characteristics.