• 文献标题:   Schottky barrier tuning of the graphene/SnS2 van der Waals heterostructures through electric field
  • 文献类型:   Article
  • 作  者:   ZHANG F, LI W, MA YQ, DAI XQ
  • 作者关键词:   schottky barrier, electric field, electronic structure, graphene/sns2 heterostructure
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098 EI 1879-2766
  • 通讯作者地址:   Henan Normal Univ
  • 被引频次:   7
  • DOI:   10.1016/j.ssc.2017.12.026
  • 出版年:   2018

▎ 摘  要

Combining the electronic structures of two-dimensional monolayers in ultrathin hybrid nanocomposites is expected to display new properties beyond their single components. The effects of external electric field (E-ext) on the electronic structures of monolayer SnS2 with graphene hybrid heterobilayers are studied by using the first-principle calculations. It is demonstrated that the intrinsic electronic properties of SnS2 and graphene are quite well preserved due to the weak van der Waals (vdW) interactions. We find that the n-type Schottky contacts with the significantly small Schottky barrier are formed at the graphene/SnS2 interface. In the graphene/SnS2 heterostructure, the vertical Eext can control not only the Schottky barriers (n-type and p-type) but also contact types (Schottky contact or Ohmic contact) at the interface. The present study would open a new avenue for application of ultrathin graphene/SnS2 heterostructures in future nano-and optoelectronics.