• 文献标题:   Edge proximity-induced magnetoresistance and spin polarization in ferromagnetic gated bilayer graphene nanoribbon
  • 文献类型:   Article
  • 作  者:   DERAKHSHAN V, CHERAGHCHI H
  • 作者关键词:   spin polarization, magnetoresistance, ferromagnetic bilayer graphene, perpendicular applied gate voltage
  • 出版物名称:   JOURNAL OF MAGNETISM MAGNETIC MATERIALS
  • ISSN:   0304-8853 EI 1873-4766
  • 通讯作者地址:   Damghan Univ
  • 被引频次:   5
  • DOI:   10.1016/j.jmmm.2014.01.011
  • 出版年:   2014

▎ 摘  要

Coherent spin-dependent transport through a junction containing normal/ferromagnetic/normal bilayer graphene nanoribbon with zigzag edges is investigated by using Landauer formalism. In a more realistic setup, the exchange field is induced by two ferromagnetic insulator strips deposited on the ribbon edges while a perpendicular electric field is applied by the top gated electrodes. Our results show that, for antiparallel configuration, a band gap is opened giving rise to a semiconducting behavior, while for parallel configuration, the band structure has no band gap. As a result, a giant magnetoresistance is achievable by changing the alignment of induced magnetization. Application of a perpendicular electric field on the parallel configuration results in a spin field-effect transistor where a fully spin polarization occurs around the Dirac point. To compare our results with the one for monolayer graphene, we demonstrate that the reflection symmetry and so the parity conservation fail in bilayer graphene nanoribbons with the zigzag edges. (C) 2014 Elsevier B.V. All rights reserved.