• 文献标题:   Control of the pi plasmon in a single layer graphene by charge doping
  • 文献类型:   Article
  • 作  者:   SHIN SY, KIM ND, KIM JG, KIM KS, NOH DY, KIM KS, CHUNG JW
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Pohang Univ Sci Technol
  • 被引频次:   57
  • DOI:   10.1063/1.3630230
  • 出版年:   2011

▎ 摘  要

We report that the behavior of a low-energy pi plasmon excitation in a single layer graphene (SLG) can be modified by doping external potassium (K) atoms, a feature demanded to realize the graphene plasmonics. Using high-resolution electron-energy-loss spectroscopy, we find that upon K-doping the pi plasmon energy increases by 1.1 eV due to the K-induced electron density up to n=7 x 10(13) cm(-2) in SLG. The four modified dispersions for different K-dopings, however, are found to merge into a single universal curve when plotted in the dimensionless coordinates indicating that the unique plasmonic character of SLG is preserved despite the K-dopings. (C) 2011 American Institute of Physics. [doi:10.1063/1.3630230]