▎ 摘　　要

The electrical and photoconducting properties of Al/graphene oxide doped NiO nanocomposite/p-Si/Al photodiodes with various graphene oxide contents were investigated by using current-voltage, transient photocurrent, photocapacitance and photoconductance measurements at various illumination intensities in the range of 10-100 mW/cm(2). Graphene oxide doped NiO nanocomposite thin films were prepared by sol-gel spin method. Experimental results indicate that the reverse current of the photodiodes increases with the increasing illumination intensity. The value of transient photocurrent, photocapacitance and photoconductance measured as a function of time increases after illuminating and returns to original value after turning off the illumination. In addition, the frequency-dependent capacitance and conductance measurements was performed to indicate the existence of interface states. The obtained results suggest that the fabricated diode can be used as a photodiode in optoelectronic applications. (C) 2016 Elsevier B.V. All rights reserved.