▎ 摘　　要

Within the approach based on chemical modification of domain boundaries of polycrystalline graphene, a transistor channel is proposed for enhanced current modulation, I-on/I-off ratio, in the 3 to 5 order of magnitude. We observed that two types of samples functionalized by N-methylpirrolidone (NMP) and weakly fluorinated graphene are able to demonstrate high current modulation. Experimentally, I-on/I-off similar to 10(3) was found for NMP functionalized graphene and I-on/I-off similar to 10(4)-10(5) for weakly fluorinated graphene. Modeling of these two systems allows us to clarify the mechanism of carrier transport in the multi-barrier films of functionalized graphene films. It is shown that remarkable value for I-on/I-off as about 10(6) can be observed for the films comprising graphene regions (graphene quantum dots, GQDs) with size of similar to 30-300 nm and similar to 75-100 nm fluorinated graphene barriers. Relatively high values of I-on/I-off similar to 10(3)-10(5) are also predicted for large graphene areas separated with thin (100 nm) barriers for the weakly fluorinated graphene samples. Our study paves a way towards controllable 2D transistors.