▎ 摘　　要

The presented study focuses on the appearance of defects in graphene grown on Cu(100), (110) and (111) single crystals by low pressure chemical vapour deposition (CVD) from methane with either C-12 or C-13 isotope. By analysing the Raman D band, we assume the defects originate mainly on boundaries between tilted graphene domains grown on Cu(100) and Cu(110), in contrast to graphene grown on Cu(111), where the D band is scarce in the Raman spectra. The other main source of defects may come from graphene edges around small adlayers randomly present in the samples. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim