• 文献标题:   Nitrogen doped high quality CVD grown graphene as a fast responding NO2 gas sensor
  • 文献类型:   Article
  • 作  者:   SRIVASTAVA S, KASHYAP PK, SINGH V, SENGUTTUVAN TD, GUPTA BK
  • 作者关键词:  
  • 出版物名称:   NEW JOURNAL OF CHEMISTRY
  • ISSN:   1144-0546 EI 1369-9261
  • 通讯作者地址:   CSIR Natl Phys Lab
  • 被引频次:   3
  • DOI:   10.1039/c8nj00885j
  • 出版年:   2018

▎ 摘  要

Nitrogen doped graphene (NGr) has been synthesized using a chemical vapor deposition (CVD) method for the fast detection of NO2 gas at room temperature. The quality of these NGr nanosheets has been confirmed using FESEM, XPS and Raman spectroscopy. Different nitrogen doping concentrations in the Gr lattice have been investigated by varying the growth time for the diffusion of nitrogen in the Gr lattice sites. The design and fabrication of the gas sensor device have been optimized using a SiO2 substrate and patterned gold electrodes. This nitrogen doped graphene honeycomb lattice improves the adsorption sites for gas molecules, which could improve the sensitivity of the gas sensor compared to CVD grown pristine graphene (Gr) nanosheets. Thus, the NGr nanosheet NO2 gas sensor reported here presents a better alternative for next generation ultrathin lightweight portable devices.