▎ 摘　　要

We report the gate-tunable photoresponse of a defective graphene over the ultraviolet (UV) and the visible light illumination, where the defect was generated by plasma irradiation. Plasma induced Dirac point shift indicates the p-doping effect. Interestingly the defective-graphene field effect transistor (defective-GFET) showed a negative shift upon UV illumination, whereas the device showed a positive shift under visible light illumination, along with the change in the photocurrent. The defective-GFET device showed a high photoresponsivity of 37 mA W-1 under visible light, that is similar to 3 times higher than that of the pristine graphene device. Photoinduced molecular desorption causes the UV light responsivity to 18 mA W-1. This study shows that the tunable photodetector with high responsivity is feasible by introducing an artificial defect on graphene surface