▎ 摘　　要

We report the observation of the integer quantum Hall states at Landau level fillings of nu=2, 6, and 10 in a Hall bar device made of a single-layer epitaxial graphene film on the silicon-face of silicon-carbide prepared via argon-assisted graphitization. The two-dimensional electron gas exhibits a low-temperature (at 4 K) carrier mobility of similar to 14 000 cm(2)/V s at the electron density of 6.1 x 10(11) cm(-2). Furthermore, the sheet resistance obtained from four-probe measurements across the whole area (12 x 6 mm(2)) of another specimen grown under similar condition displays roughly uniform values (similar to 1600 Omega/square), suggesting that the macroscopic steps and accompanying multilayer graphene domains play a minor role in the low-temperature electronic transport. (C) 2010 American Institute of Physics. [doi:10.1063/1.3525588]